Features: · Very low on-state resistance. · Q101 compliant· 175 °C rated · Standard level compatible.Application· Automotive systems · 12 V loads· Motors, lamps and solenoids · General purpose power switching.PinoutSpecifications Symbol Parameter Conditions Min Max Unit ...
BUK762R7-30B: Features: · Very low on-state resistance. · Q101 compliant· 175 °C rated · Standard level compatible.Application· Automotive systems · 12 V loads· Motors, lamps and solenoids · General purpose power...
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Features: *Integrated current sensor *Q101 compliant *ESD protection *Standard level compatib...
Features: *ESD protection* Integrated current sensor* Q101 compliant*Standard level compatible.App...
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
VDS |
drain-source voltage (DC) |
- |
30 |
V | |
VDGR |
drain-gate voltage (DC) | RGS = 20 k |
- |
30 |
V |
VGS |
gate-source voltage (DC) |
- |
±20 |
V | |
ID |
drain current (DC) | Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 |
- |
241 |
A |
- |
75 |
A | |||
Tmb = 100 °C; VGS = 5 V; Figure 2 |
- |
75 |
S | ||
IDM |
drain current (peak value) | Tmb = 25 °C; pulsed; tp 10 s;Figure 3 |
- |
967 |
A |
Ptot |
total power dissipation | Tmb = 25 °C; Figure 1 |
- |
300 |
W |
Tstg |
storage temperature |
-55 |
+175 |
°C | |
Tj |
junction temperature |
-55 |
+175 |
°C | |
Source-drain diode | |||||
IDR
|
reverse drain current (DC) | Tmb = 25 °C |
- |
241 |
A |
- |
75 |
A | |||
IDRM |
pulsed reverse drain current | Tmb = 25 °C; tp 10 s |
- |
967 |
A |
Avalanche ruggedness | |||||
EDS(AL)S |
non-repetitive drain-source avalanche energy | unclamped inductive load; ID = 75 A; VDS 30 V; VGS = 10 V; RGS = 50 ; starting Tmb = 25 °C |
- |
2.3 |
J |
N-channel enhancement mode field-effect power transistor BUK762R7-30B in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.
Product availability:
BUK752R7-30B in SOT78 (TO-220AB)
BUK762R7-30B in SOT404 (D2-PAK).