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BUK76150-55A

Features: `Very low on-state resistance`Q101 compliant` 175 rated ` Standard level compatible.Application· Automotive systems ·12 V and 24 V loads· Motors, lamps and solenoids · General purpose power switching.Specifications Symbol Parameter Conditions Min Max Unit VDS drain-source ...

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BUK76150-55A: Features: `Very low on-state resistance`Q101 compliant` 175 rated ` Standard level compatible.Application· Automotive systems ·12 V and 24 V loads· Motors, lamps and solenoids · General purpose pow...

BUK76150-55A Data Sheet

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Part Number:
BUK76150-55A
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`Very low on-state resistance
`Q101 compliant
` 175 rated
` Standard level compatible.


Application

· Automotive systems
·12 V and 24 V loads
· Motors, lamps and solenoids
· General purpose power switching.


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) - 55 V
VDGR drain-gate voltage (DC) RGS = 20 k - 55 V
VGS gate-source voltage (DC) - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10V;
Figure 2 and 3		 - 11
A
Tmb = 100 ; VGS = 10 V; Figure 2 78 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 44 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 36 W
Tstg storage temperature -55 +175
Tj operating junction temperature -55 +175
Source-drain diode
IDR reverse drain current (DC) Tmb= 25



-
11

A
IDRM peak reverse drain current Tmb= 25 ; pulsed; tp 10 s - 44 A
Avalanche ruggedness
EDS(AL)S non-repetitive avalanche energy unclamped inductive load; ID = 11A;
VDS 55 V; VGS = 10 V;
RGS = 50 ; starting Tj = 25 		- 16 mJ
 



Description

N-channel enhancement mode field-effect power transistor BUK76150-55A in a plastic package using Philips General-Purpose Automotive (GPA) TrenchMOS™ technology.




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