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BUK7610-55AL

Features: ` TrenchMOS™ technology `Q101 compliant` 175 rated ` Stable operation in linear mode.Application· Automotive systems · Repetitive clamped inductive switching· DC linear motor control · 12 V and 24 V loads.Specifications Symbol Parameter Conditions Min Max Unit VDS dr...

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BUK7610-55AL: Features: ` TrenchMOS™ technology `Q101 compliant` 175 rated ` Stable operation in linear mode.Application· Automotive systems · Repetitive clamped inductive switching· DC linear motor contro...

BUK7610-55AL Data Sheet

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Part Number:
BUK7610-55AL
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Upload time: 2024/11/23

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Product Details

Description



Features:

` TrenchMOS™ technology
`Q101 compliant
` 175 rated
` Stable operation in linear mode.


Application

· Automotive systems
· Repetitive clamped inductive switching
· DC linear motor control
· 12 V and 24 V loads.


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) - 55 V
VDGR drain-gate voltage (DC) RGS = 20 k - 55 V
VGS gate-source voltage (DC) - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10V;[1]
Figure 2 and 3[2][3]		 - 122
75		 A
A
Tmb = 100 ; VGS = 10 V; Figure 2[2] 75 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 490 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 300 W
Tstg storage temperature -55 +175
Tj operating junction temperature -55 +175
Source-drain diode
IDR reverse drain current (DC) Tmb= 25 [1]
[1] [3]
[2]
- 		122
75
A
A
IDRM peak reverse drain current Tmb= 25 ; pulsed; tp 10 s - 490 A
Avalanche ruggedness
EDS(AL)S non-repetitive avalanche energy unclamped inductive load; ID = 75A;
VDS 55 V; VGS = 10 V;
RGS = 50 ; starting Tj = 25 		- 1.1 mJ
EDS(AL)R repetitive drain-sourceavalanche
energy		   - [4] -
 
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
[3] Refer to document 9397 750 12572 for further information.
[4]
a) Max value not quoted. Repetitive rating defined in Figure 16.
b) Single-shot avalanche rating limited by Tj(max) of 175 .
c) Repetitive avalanche rating limited by Tj(avg) of 170 .
d) Refer to application note AN10273 for further information.



Description

N-channel enhancement mode field-effect power transistor BUK7610-55AL in a plastic package using Philips General-Purpose Automotive (GPA) TrenchMOS™ technology specifically optimized for linear operation.




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