Position: Home  > All Categories> Integrated Circuits (ICs) > BUK7610-55AL

BUK7610-55AL

Features: ` TrenchMOS™ technology `Q101 compliant` 175 rated ` Stable operation in linear mode.Application· Automotive systems · Repetitive clamped inductive switching· DC linear motor control · 12 V and 24 V loads.Specifications Symbol Parameter Conditions Min Max Unit VDS dr...

product image

BUK7610-55AL Picture
See larger image
SeekIC No. : 004304412 Detail

BUK7610-55AL: Features: ` TrenchMOS™ technology `Q101 compliant` 175 rated ` Stable operation in linear mode.Application· Automotive systems · Repetitive clamped inductive switching· DC linear motor contro...

BUK7610-55AL Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
BUK7610-55AL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

` TrenchMOS™ technology
`Q101 compliant
` 175 rated
` Stable operation in linear mode.


Application

· Automotive systems
· Repetitive clamped inductive switching
· DC linear motor control
· 12 V and 24 V loads.


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) - 55 V
VDGR drain-gate voltage (DC) RGS = 20 k - 55 V
VGS gate-source voltage (DC) - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10V;[1]
Figure 2 and 3[2][3]		 - 122
75		 A
A
Tmb = 100 ; VGS = 10 V; Figure 2[2] 75 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 490 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 300 W
Tstg storage temperature -55 +175
Tj operating junction temperature -55 +175
Source-drain diode
IDR reverse drain current (DC) Tmb= 25 [1]
[1] [3]
[2]
- 		122
75
A
A
IDRM peak reverse drain current Tmb= 25 ; pulsed; tp 10 s - 490 A
Avalanche ruggedness
EDS(AL)S non-repetitive avalanche energy unclamped inductive load; ID = 75A;
VDS 55 V; VGS = 10 V;
RGS = 50 ; starting Tj = 25 		- 1.1 mJ
EDS(AL)R repetitive drain-sourceavalanche
energy		   - [4] -
 
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
[3] Refer to document 9397 750 12572 for further information.
[4]
a) Max value not quoted. Repetitive rating defined in Figure 16.
b) Single-shot avalanche rating limited by Tj(max) of 175 .
c) Repetitive avalanche rating limited by Tj(avg) of 170 .
d) Refer to application note AN10273 for further information.



Description

N-channel enhancement mode field-effect power transistor BUK7610-55AL in a plastic package using Philips General-Purpose Automotive (GPA) TrenchMOS™ technology specifically optimized for linear operation.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Undefined Category
VI-B63-IU
X27 589
Test Equipment
TOP853
TOP2005
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
View more