Features: ` TrenchMOS™ technology` Q101 compliant`175 rated` Standard level compatible.Application· Automotive systems· Motors, lamps and solenoids· 12 V and 24 V loads· General purpose power switching.Specifications Symbol Parameter Conditions Min Max Unit VDS drain-source vo...
BUK7608-55A: Features: ` TrenchMOS™ technology` Q101 compliant`175 rated` Standard level compatible.Application· Automotive systems· Motors, lamps and solenoids· 12 V and 24 V loads· General purpose power...
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Features: *Integrated current sensor *Q101 compliant *ESD protection *Standard level compatib...
Features: *ESD protection* Integrated current sensor* Q101 compliant*Standard level compatible.App...
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | - | 55 | V | |
VDGR | drain-gate voltage (DC) | RGS = 20 k | - | 55 | V |
VGS | gate-source voltage (DC) | - | ±20 | V | |
ID | drain current (DC) | Tmb = 25 ; VGS = 10V;[1] Figure 2 and 3[2] |
- | 126 75 |
A A |
Tmb = 100 ; VGS = 10 V; Figure 2[2] | 75 | A | |||
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 504 | A |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 254 | W |
Tstg | storage temperature | -55 | +175 | ||
Tj | junction temperature | -55 | +175 | ||
Source-drain diode | |||||
IDR | reverse drain current (DC) | Tmb= 25 [1] [2] |
- |
126 75 |
A |
IDRM | peak reverse drain current | Tmb= 25 ; pulsed; tp 10 s | - | 504 | A |
Avalanche ruggedness | |||||
WDSS | non-repetitive avalanche energy | unclamped inductive load; ID = 75A; VDS 55 V; VGS = 10 V; RGS = 50 ; starting Tmb = 25 |
- | 670 | mJ |
[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package
N-channel enhancement mode field-effect power transistor BUK7608-55A in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Product availability: BUK7508-55A in SOT78 (TO-220AB) BUK7608-55A in SOT404 (D2-PAK).