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BUK7606-55B

Features: ` Very low on-state resistance` Q101 compliant`175 rated` Standard level compatible.Application·Automotive systems ·12 V and 24 V loads· Motors, lamps and solenoids ·General purpose power switching.Specifications Symbol Parameter Conditions Min Max Unit VDS drain-source vo...

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BUK7606-55B: Features: ` Very low on-state resistance` Q101 compliant`175 rated` Standard level compatible.Application·Automotive systems ·12 V and 24 V loads· Motors, lamps and solenoids ·General purpose power...

BUK7606-55B Data Sheet

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Part Number:
BUK7606-55B
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

` Very low on-state resistance
` Q101 compliant
`175 rated
` Standard level compatible.


Application

·Automotive systems
·12 V and 24 V loads
· Motors, lamps and solenoids
·General purpose power switching.


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) - 55 V
VDGR drain-gate voltage (DC) RGS = 20 k - 55 V
VGS gate-source voltage (DC) - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10V;[1]
Figure 2 and 3[2]		 - 145
75		 A
A
Tmb = 100 ; VGS = 10 V; Figure 2[2] 75 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 582 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 254 W
Tstg storage temperature -55 +175
Tj junction temperature -55 +175
Source-drain diode
IDR reverse drain current (DC) Tmb= 25 [1]
[2]
- 		145
75
A
A
IDRM peak reverse drain current Tmb= 25 ; pulsed; tp 10 s - 582 A
Avalanche ruggedness
EDS(AL)S non-repetitive avalanche energy unclamped inductive load; ID = 75A;
VDS 55 V; VGS = 10 V;
RGS = 50 ; starting Tmb = 25 		- 680 mJ
 



Description

N-channel enhancement mode field-effect power transistor BUK7606-55B in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

Product availability: BUK7506-55B in SOT78 (TO-220AB) BUK7606-55B in SOT404 (D2-PAK).




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