BUK7575-55A

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 0.075 Ohms
Packaging : Rail
Continuous Drain Current : 20.3 A


Features:

` TrenchMOS™ technology
` Q101 compliant
` 175 rated
` Standard level compatible.


Application

· Automotive and general purpose power switching:
· 12 V and 24 V loads
· Motors, lamps and solenoids.


Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VDS	drain-source voltage (DC)		-	55	V
VDGR	drain-gate voltage (DC)	RGS = 20 k	-	55	V
VGS	gate-source voltage (DC)		-	±20	V
ID	drain current (DC)	Tmb = 25 ; VGS = 10V; Figure 2 and 3	-	20.3	A
		Tmb = 100 ; VGS = 10 V; Figure 2	-	14.3	A
IDM	peak drain current	Tmb = 25 ; pulsed; tp 10 s; Figure 3	-	81	A
Ptot	total power dissipation	Tmb = 25 ; Figure 1	-	62	W
Tstg	storage temperature		-55	+175
Tj	operating junction temperature		-55	+175
Source-drain diode
IDR	reverse drain current (DC)	Tmb= 25	-	20.3	A
IDRM	pulsed reverse drain current	Tmb= 25 ; pulsed; tp 10 s	-	81	A
Avalanche ruggedness
WDSS	non-repetitive avalanche energy	unclamped inductive load; ID =11A; VDS 55V; VGS = 10 V; RGS = 50 ; starting Tmb = 25	-	30.3	mJ

 

Description

N-channel enhancement mode field-effect power transistor BUK7575-55A in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

Product availability: BUK7575-55A in SOT78 (TO-220AB) BUK7675-55A in SOT404 (D ²-PAK).