BUK754R0-55B

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 55 V
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.004 Ohms
Continuous Drain Current : 193 A


Features:

` Very low on-state resistance
` Q101 compliant
` 175 rated
` Standard level compatible.


Application

· Automotive systems
· 12 V and 24 V loads
· Motors, lamps and solenoids
· General purpose power switching.


Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VDS	drain-source voltage (DC)		-	55	V
VDGR	drain-gate voltage (DC)	RGS = 20 k	-	55	V
VGS	gate-source voltage (DC)		-	±20	V
ID	drain current (DC)	Tmb = 25 ; VGS = 10V;[1] Figure 2 and 3[2]	- -	193 75	A A
		Tmb = 100 ; VGS = 10 V; Figure 2[2]	-	75	A
IDM	peak drain current	Tmb = 25 ; pulsed; tp 10 s; Figure 3	-	774	A
Ptot	total power dissipation	Tmb = 25 ; Figure 1	-	300	W
Tstg	storage temperature		-55	+175
Tj	operating junction temperature		-55	+175
Source-drain diode
IDR	reverse drain current (DC)	Tmb= 25 [1] [2]	- -	193 75	A A
IDRM	peak reverse drain current	Tmb= 25 ; pulsed; tp 10 s	-	774	A
Avalanche ruggedness
EDS(AL)S	non-repetitive avalanche energy	unclamped inductive load; ID =75A; VDS 55V; VGS = 10 V; RGS = 50 ; starting Tj = 25	-	1.2	mJ

 

Description

N-channel enhancement mode field-effect power transistor BUK754R0-55B in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

Product availability: BUK754R0-55B in SOT78 (TO-220AB) BUK764R0-55B in SOT404 (D²-PAK).