BUK753R1-40B

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 0.0031 Ohms
Continuous Drain Current : 75 A
Packaging : Rail


Features:

· Very low on-state resistance
· Q101 compliant
· 175 °C rated
· Standard level compatible.

Application

· Automotive systems
· 12 V loads
· Motors, lamps and solenoids
· General purpose power switching.

Pinout

Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VDS	drain-source voltage (DC)		-	40	V
VDGR	drain-gate voltage (DC)	RGS = 20 k	-	40	V
VGS	gate-source voltage (DC)		-	±20	V
ID	drain current (DC)	Tmb = 25 °C; VGS = 10 V; Figure 2 and 3	-	225	A
			-	75	A
		Tmb = 100 °C; VGS = 5 V; Figure 2	-	75	S
IDM	drain current (peak value)	Tmb = 25 °C; pulsed; tp 10 s;Figure 3	-	902	A
Ptot	total power dissipation	Tmb = 25 °C; Figure 1	-	300	W
Tstg	storage temperature		-55	+175	°C
Tj	junction temperature		-55	+175	°C
Source-drain diode
IDR	reverse drain current (DC)	Tmb = 25 °C	-	225	A
			-	75	A
IDRM	pulsed reverse drain current	Tmb = 25 °C; tp 10 s	-	902	A
Avalanche ruggedness
EDS(AL)S	non-repetitive drain-source avalanche energy	unclamped inductive load; ID = 75 A; VDS 40 V; VGS = 10 V; RGS = 50 ; starting Tmb = 25 °C	-	1.6	J

[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package.


Description

N-channel enhancement mode field-effect power transistor BUK753R1-40B in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

Product availability:
BUK753R1-40B in SOT78 (TO-220AB)
BUK763R1-40B in SOT404 (D²-PAK).