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BUK752R7-30B

MOSFET HIGH PERF TRENCHMOS

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SeekIC No. : 00161330 Detail

BUK752R7-30B: MOSFET HIGH PERF TRENCHMOS

BUK752R7-30B Data Sheet

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Part Number:
BUK752R7-30B
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 241 A
Resistance Drain-Source RDS (on) : 0.0027 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Rail    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 0.0027 Ohms
Packaging : Rail
Continuous Drain Current : 241 A


Features:

· Very low on-state resistance.
· Q101 compliant
· 175 °C rated
· Standard level compatible.


Application

· Automotive systems
· 12 V loads
· Motors, lamps and solenoids
· General purpose power switching.


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS
 drain-source voltage (DC)  
-
30
V
VDGR
 drain-gate voltage (DC) RGS = 20 k
-
30
V
VGS
 gate-source voltage (DC)  
-
±20
V
ID
 drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
-
241
A
-
75
A
    Tmb = 100 °C; VGS = 5 V; Figure 2
-
75
S
IDM
 drain current (peak value) Tmb = 25 °C; pulsed; tp 10 s;Figure 3
-
967
A
Ptot
 total power dissipation Tmb = 25 °C; Figure 1
-
300
W
Tstg
 storage temperature  
-55
+175
°C
Tj
 junction temperature  
-55
+175
°C
Source-drain diode
IDR
 reverse drain current (DC) Tmb = 25 °C
-
241
A
-
75
A
IDRM
 pulsed reverse drain current Tmb = 25 °C; tp 10 s
-
967
A
Avalanche ruggedness
EDS(AL)S
 non-repetitive drain-source avalanche energy unclamped inductive load; ID = 75 A; VDS 30 V; VGS = 10 V; RGS = 50 ; starting Tmb = 25 °C
-
2.3
J
[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package.


Description

N-channel enhancement mode field-effect power transistor BUK752R7-30B in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

Product availability:
BUK752R7-30B in SOT78 (TO-220AB)
BUK762R7-30B in SOT404 (D2-PAK).




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