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BUK7528-55A

MOSFET RAIL PWR-MOS

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SeekIC No. : 00162715 Detail

BUK7528-55A: MOSFET RAIL PWR-MOS

BUK7528-55A Data Sheet

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Part Number:
BUK7528-55A
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 42 A
Resistance Drain-Source RDS (on) : 0.028 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Rail    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Continuous Drain Current : 42 A
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 0.028 Ohms
Packaging : Rail


Application

·These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 55 V
VDGR Drain-gate voltage RGS = 20 k - 55 V
±VGS Gate-source voltage - - 20 V
ID Drain current (DC) Tmb = 25 - 42 A
ID Drain current (DC) Tmb = 100 - 30 A
IDM Drain current (pulse peak value) Tmb = 25 - 168 A
Ptot Total power dissipation Tmb = 25 - 99 W
TstgTj Storage & operating temperature - -55 175



Description

N-channel enhancement modestandard level field-effect power transistor BUK7528-55A in a plastic envelopeavailable in TO220AB and SOT404 .Using 'trench' technology whichfeatures very low on-stateresistance. It is intended for use inautomotive and general purposeswitching applications.




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