BUK7526-100B

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Package / Case : TO-220AB
Continuous Drain Current : 49 A
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.026 Ohms


Features:

` Very low on-state resistance
` Q101 compliant
`175 rated
` Standard level compatible.


Application

· Automotive systems
·12 V, 24 V and 42 V loads
· Motors, lamps and solenoids
· General purpose power switching.


Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VDS	drain-source voltage (DC)		-	100	V
VDGR	drain-gate voltage (DC)	RGS = 20 k	-	100	V
VGS	gate-source voltage (DC)		-	±20	V
ID	drain current (DC)	Tmb = 25 ; VGS = 10V; Figure 2 and 3	-	49	A
		Tmb = 100 ; VGS = 10 V; Figure 2		34	A
IDM	peak drain current	Tmb = 25 ; pulsed; tp 10 s; Figure 3	-	197	A
Ptot	total power dissipation	Tmb = 25 ; Figure 1	-	157	W
Tstg	storage temperature		-55	+175
Tj	operating junction temperature		-55	+175
Source-drain diode
IDR	reverse drain current (DC)	Tmb= 25	-	49	A
IDRM	peak reverse drain current	Tmb= 25 ; pulsed; tp 10 s	-	197	A
Avalanche ruggedness
EDS(AL)S	non-repetitive avalanche energy	unclamped inductive load; ID = 49A; VDS 100V; VGS = 10 V; RGS = 50 ; starting Tj = 25	-	144	mJ

Description

N-channel enhancement mode field-effect power transistor BUK7526-100B in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

Product availability: BUK7526-100B in SOT78 (TO-220AB) BUK7626-100B in SOT404 (D²-PAK).