BUK7520-55A

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 54 A
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.02 Ohms


Features:

TrenchMOS™ technology
Q101 compliant
175 °C rated
Standard level compatible.


Application

Automotive and general purpose power switching:
  12 V and 24 V loads
  Motors, lamps and solenoids.


Pinout




Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VDS	drain-source voltage (DC)		-	55	V
VDGR	drain-gate voltage (DC)	RGS = 20 k	-	55	V
VGS	gate-source voltage (DC)		-	±20	V
ID	drain current (DC)	Tmb = 25 °C; VGS = 10 V; Figure 2 and 3	-	54	A
		Tmb = 100 °C; VGS = 10 V; Figure 2	-	38	A
IDM	peak drain current	Tmb = 25 °C; pulsed; tp 10s; Figure 3	-	217	A
Ptot	total power dissipation	Tmb = 25 °C; Figure 1	-	118	W
Tstg	storage temperature		-55	+175	°C
Tj	operating junction temperature		-55	+175	°C
Source-drain diode
IDR	reverse drain current (DC)	Tmb = 25 °C	-	54	A
IDRM	pulsed reverse drain current	Tmb = 25 °C; pulsed; tp 10 s	-	217	A
Avalanche ruggedness
WDSS	non-repetitive avalanche energy	unclamped inductive load; ID = 48 A; VDS 55 V; VGS = 10 V; RGS = 50 ; starting Tmb= 25 °C	-	115	mJ

Description

N-channel enhancement mode field-effect power transistor BUK7520-55A in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

Product availability:
  BUK7520-55A in SOT78 (TO-220AB)
  BUK7620-55A in SOT404 (D 2-PAK).