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BUK7520-55

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drain-gate voltage RGS = 20 k - 55 V ±VGS Gate-source voltage - - 16 V ID Drain current (DC) Tmb = 25 °C - 52 A ID Drain current (...

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BUK7520-55: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drain-gate voltage RGS = 20 k - 55 V ±VGS Gate-source vo...

BUK7520-55 Data Sheet

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Part Number:
BUK7520-55
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 55 V
VDGR Drain-gate voltage RGS = 20 k - 55 V
±VGS Gate-source voltage - - 16 V
ID Drain current (DC) Tmb = 25 °C - 52 A
ID Drain current (DC) Tmb = 100 °C - 37 A
IDM Drain current (pulse peak value) Tmb = 25 °C - 208 A
Ptot Total power dissipation Tmb = 25 °C - 116 W
Tstg, Tj Storage & operating temperature - - 55 175 °C



Description

N-channel enhancement mode standard level field-effect power transistor BUK7520-55 in a plastic envelope using 'trench' technology. BUK7520-55 features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applications.


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