Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Drain-Source Breakdown Voltage
: 100 V
Mounting Style
: Through Hole
Continuous Drain Current
: 63 A
Package / Case
: TO-220AB
Packaging
: Rail
Resistance Drain-Source RDS (on)
: 0.02 Ohms
Features: ` TrenchMOS™ technology
` Q101 compliant
` 175 rated
` Standard level compatible.Application· Automotive and general purpose power switching:
· 12 V, 24 V and 42 V loads
· Motors, lamps and solenoids.Specifications
| Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
| VDS |
drain-source voltage (DC) |
|
- |
100 |
V |
| VDGR |
drain-gate voltage (DC) |
RGS = 20 k |
- |
100 |
V |
| VGS |
gate-source voltage (DC) |
|
- |
±20 |
V |
| ID |
drain current (DC) |
Tmb = 25 ; VGS = 10V;
Figure 2 and 3 |
- |
63
|
A |
| Tmb = 100 ; VGS = 10 V; Figure 2 |
44 |
A |
| IDM |
peak drain current |
Tmb = 25 ; pulsed; tp 10 s; Figure 3 |
- |
253 |
A |
| Ptot |
total power dissipation |
Tmb = 25 ; Figure 1 |
- |
200 |
W |
| Tstg |
storage temperature |
|
-55 |
+175 |
|
| Tj |
operating junction temperature |
|
-55 |
+175 |
|
| Source-drain diode |
| IDR |
reverse drain current (DC) |
Tmb= 25
|
- |
63 |
A |
| IDRM |
pulsed reverse drain current |
Tmb= 25 ; pulsed; tp 10 s |
- |
253 |
A |
| Avalanche ruggedness |
| WDSS |
non-repetitive avalanche energy |
unclamped inductive load; ID = 60A;
VDS 100 V; VGS = 10 V;
RGS = 50 ; starting Tj = 25 |
- |
400 |
mJ |
DescriptionN-channel enhancement mode field-effect power transistor BUK7520-100A in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
BUK7520-100A availability: BUK7520-100A in SOT78 (TO-220AB) BUK7620-100A in SOT404 (D 2-PAK).
BUK7520-100A Data Sheet
