Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Package / Case
: TO-220AB
Drain-Source Breakdown Voltage
: 55 V
Continuous Drain Current
: 11 A
Resistance Drain-Source RDS (on)
: 0.15 Ohms
Packaging
: Rail
Features: ` TrenchMOS™ technology
` Q101 compliant
` 175 rated
` Standard level compatible.Application· Automotive and general purpose power switching:
·12 V and 24 V loads
· Motors, lamps and solenoids.Pinout
Specifications
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
|
VDS |
drain-source voltage (DC) |
|
-
|
55 |
V |
|
VDGR |
drain-gate voltage (DC) |
RGS = 20 k |
-
|
55 |
V |
|
VGS |
gate-source voltage (DC) |
|
- |
±20 |
V |
|
ID |
drain current (DC) |
Tmb = 25; VGS = 10 V; Figure 2 and 3 |
- |
11 |
A |
| Tmb = 100; VGS = 10 V; Figure 2 |
- |
7.8 |
A |
|
IDM |
peak drain current |
Tmb = 25; pulsed; tp 10 s; Figure 3 |
- |
44 |
A |
|
Ptot |
total power dissipation |
Tmb = 25; Figure 1 |
- |
36.6 |
W |
|
Tstg |
Storage temperature |
|
-55 |
+175 |
|
|
Tj |
operating junction temperature |
|
-55 |
+175 |
|
| Source-drain diode |
|
IDR |
reverse drain current (DC) |
Tmb = 25 |
- |
11 |
A |
|
IDRM |
peak reverse drain current |
Tmb = 25; pulsed; tp 10 s |
- |
44 |
A |
| Avalanche ruggedness |
|
WDSS |
non-repetitive avalanche energy |
unclamped inductive load; ID =8 A;
VDS55V; VGS = 10 V; RGS = 50;
starting Tmb= 25 |
- |
6.4 |
mJ |
DescriptionN-channel enhancement mode field-effect power transistor BUK75150-55A in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
BUK75150-55A availability:
BUK75150-55A in SOT78 (TO-220AB)
BUK76150-55A in SOT404 (D 2-PAK).
BUK75150-55A Data Sheet
