MOSFET RAIL PWR-MOS
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Features: *Integrated current sensor *Q101 compliant *ESD protection *Standard level compatib...
Features: *ESD protection* Integrated current sensor* Q101 compliant*Standard level compatible.App...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 75 A | ||
Resistance Drain-Source RDS (on) : | 0.15 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Rail |
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | Drain-source voltage | - | - | 100 | V |
VDGR | Drain-gate voltage | RGS = 20 k | - | 100 | V |
±VGS | Gate-source voltage | - | - | 20 | V |
ID | Drain current (DC) | Tmb = 25 | - | 75 | A |
ID | Drain current (DC) | Tmb = 100 | - | 53 | A |
IDM | Drain current (pulse peak value) | Tmb = 25 | - | 240 | A |
Ptot | Total power dissipation | Tmb = 25 | - | 230 | W |
TstgTj | Storage & operating temperature | - | -55 | 175 |
N-channel enhancement modestandard level field-effect powertransistor BUK7515-100A in a plastic envelope using'trench' technology which featuresvery low on-state resistance. It isintended for use in automotive andgeneral purpose switchingapplications.