BUK7515-100A

MOSFET RAIL PWR-MOS

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BUK7515-100A Picture
SeekIC No. : 00162625 Detail

BUK7515-100A: MOSFET RAIL PWR-MOS

floor Price/Ceiling Price

Part Number:
BUK7515-100A
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.15 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Rail    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Package / Case : TO-220AB
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.15 Ohms
Packaging : Rail


Application

·These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.



Pinout

  Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 100 V
VDGR Drain-gate voltage RGS = 20 k - 100 V
±VGS Gate-source voltage - - 20 V
ID Drain current (DC) Tmb = 25 - 75 A
ID Drain current (DC) Tmb = 100 - 53 A
IDM Drain current (pulse peak value) Tmb = 25 - 240 A
Ptot Total power dissipation Tmb = 25 - 230 W
TstgTj Storage & operating temperature - -55 175



Description

N-channel enhancement modestandard level field-effect powertransistor BUK7515-100A in a plastic envelope using'trench' technology which featuresvery low on-state resistance. It isintended for use in automotive andgeneral purpose switchingapplications.




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