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BUK7510-30

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 30 V VDGR Drain-gate voltage RGS = 20 k - 30 V ±VGS Gate-source voltage - - 16 V ID Drain current (DC) Tmb = 25 - 75 A ID Drain current (DC) Tmb = 100 - 53 ...

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BUK7510-30: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 30 V VDGR Drain-gate voltage RGS = 20 k - 30 V ±VGS Gate-source voltage - ...

BUK7510-30 Data Sheet

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Part Number:
BUK7510-30
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Product Details

Description



Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 30 V
VDGR Drain-gate voltage RGS = 20 k - 30 V
±VGS Gate-source voltage - - 16 V
ID Drain current (DC) Tmb = 25 - 75 A
ID Drain current (DC) Tmb = 100 - 53 A
IDM Drain current (pulse peak value) Tmb = 25 - 240 A
Ptot Total power dissipation Tmb = 25 - 142 W
TstgTj Storage & operating temperature - -55 175



Description

N-channel enhancement modestandard level field-effect power transistor BUK7510-30 in a plastic envelope using'trench' technology. BUK7510-30 features very low on-state resistanceand has integral zener diodes givingESD protection up to 2kV. It isintended for use in automotive andgeneral purpose switchingapplications.




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