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BUK7506-55A

MOSFET RAIL PWR-MOS

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SeekIC No. : 00160208 Detail

BUK7506-55A: MOSFET RAIL PWR-MOS

BUK7506-55A Data Sheet

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Part Number:
BUK7506-55A
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 154 A
Resistance Drain-Source RDS (on) : 0.0063 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Rail    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 0.0063 Ohms
Packaging : Rail
Continuous Drain Current : 154 A


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 55 V
VDGR Drain-gate voltage RGS = 20 k - 55 V
±VGS Gate-source voltage - - 20 V
ID Drain current (DC) Tmb = 25 - 75 A
ID Drain current (DC) Tmb = 100 - 75 A
IDM Drain current (pulse peak value) Tmb = 25 - 240 A
Ptot Total power dissipation Tmb = 25 - 230 W
TstgTj Storage & operating temperature - -55 175



Description

N-channel enhancement modestandard level field-effect powertransistor BUK7506-55A in a plastic envelope using'trench' technology which featuresvery low on-state resistance. It isintended for use in automotive andgeneral purpose switchingapplications.




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