BUK7504-40A

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 0.0045 Ohms
Packaging : Rail
Continuous Drain Current : 198 A


Features:

· TrenchMOS™ technology
· Q101 compliant
· 175 °C rated
· Standard level compatible.




Application

· Automotive and general purpose power switching:
· 12 V loads
· Motors, lamps and solenoids.




Pinout






Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VDS	drain-source voltage (DC)		-	40	V
VDGR	drain-gate voltage (DC)	RGS = 20 k	-	40	V
VGS	gate-source voltage (DC)		-	±20	V
ID	drain current (DC)	Tmb = 25 °C; VGS = 10 V; Figure 2 and 3	-	198	A
			-	75	A
		Tmb = 100 °C; VGS = 5 V; Figure 2	-	75	S
IDM	drain current (peak value)	Tmb = 25 °C; pulsed; tp 10 s;Figure 3	-	794	A
Ptot	total power dissipation	Tmb = 25 °C; Figure 1	-	300	W
Tstg	storage temperature		-55	+175	°C
Tj	junction temperature		-55	+175	°C
Source-drain diode
IDR	reverse drain current (DC)	Tmb = 25 °C	-	198	A
			-	75	A
IDRM	pulsed reverse drain current	Tmb = 25 °C; tp 10 s	-	794	A
Avalanche ruggedness
WDSS	non-repetitive avalanche energy	unclamped inductive load; ID = 75 A; VDS 40 V; VGS = 10 V; RGS = 50 ; starting Tmb = 25 °C	-	1.6	J

[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package




Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

Product availability:
BUK7504-40A in SOT78 (TO-220AB); BUK7604-40A in SOT404 (D²-PAK);
BUK7E04-40A in SOT226 (I²-PAK).

The BUK7504-40A is designed as N-channel enhancement mode field-effect power transistor in a plastic package using trenchMOS technology, featuring very low on-state resistance. Typical applications is automotive and general purpose power switching which means 12V loads and motors, lamps and solenoids.

BUK7504-40A has four features. The first one is trenchMOS technology. The second one is Q101 compliant. The third one is 175°C rated. The third one is standard level compatible. That are all the main features.

Some limiting values have been concluded into several points of BUK7504-40A as follow. The first one is about its drain-source voltage (DC) which would be max 40V. The second one is about its drain-gate voltage (DC) which would be max 40V. The third one is about its gate-source voltage (DC) which would be max ±20V. The fourth one is about its drain current (DC) which would be 198A at 25°C and VGS=10V. The fifth one is about its peak drain current which would be max 794A. The sixth one is about its total power dissipation which would be max 300W. The seventh one is about its storage temperature range which would be from -55°C to +175°C. The eighth one is about its operating junction temperature range which would be from -55°C to +175°C. The ninth one is about its reverse drain current (DC) which would be 198A at 25°C. The tenth one is about its peak reverse drain current which would be max 794A. The eleventh one is abot its non-repetitive avalanche energy which would be max 1.6J.

And also some characteristics about BUK7504-40A. The first one is about its drain-source breakdown voltage which would be min 40V at 25°C and would be min 36V at -55°C. The second one si about BUK7504-40A gate-source threshold voltage which would be min 2V and typ 3V and max 4V at 25°C and would be min 1V at 175°C and would be max 4.4V at -55°C. The third one is about its drain-source leakage current which would be ty 0.05uA and max 10uA at 25°C. And so on. For more information please contact us.