Features: ` TrenchMOS™ technology` Q101 compliant` 175 rated` Standard level compatible.Application· Automotive and general purpose power switching:· 12 V, 24 V and 42 V loads· Motors, lamps and solenoids.Specifications Symbol Parameter Conditions Min Max Unit VDS drain-source...
BUK7275-100A: Features: ` TrenchMOS™ technology` Q101 compliant` 175 rated` Standard level compatible.Application· Automotive and general purpose power switching:· 12 V, 24 V and 42 V loads· Motors, lamps ...
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Features: *Integrated current sensor *Q101 compliant *ESD protection *Standard level compatib...
Features: *ESD protection* Integrated current sensor* Q101 compliant*Standard level compatible.App...
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | - | 100 | V | |
VDGR | drain-gate voltage (DC) | RGS = 20 k | - | 100 | V |
VGS | gate-source voltage (DC) | - | ±20 | V | |
ID | drain current (DC) | Tmb = 25 ; VGS = 10V; Figure 2 and 3 |
- | 21.7 | A |
Tmb = 100 ; VGS = 10 V; Figure 2 | 15.4 | A | |||
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3[1] | - | 87 | A |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 89 | W |
Tstg | storage temperature | -55 | +175 | ||
Tj | operating junction temperature | -55 | +175 | ||
Source-drain diode | |||||
IDR | reverse drain current (DC) | Tmb= 25 |
- |
21.7 | A |
IDRM | peak reverse drain current | Tmb= 25 ; pulsed; tp 10 s | - | 87 | A |
Avalanche ruggedness | |||||
WDSS | non-repetitive avalanche energy | unclamped inductive load; ID = 14 A; VDS 100 V; VGS = 10 V; RGS = 50 ; starting Tj = 25 |
- | 100 | mJ |
[1] IDM is limited by chip, not package.
N-channel enhancement mode field-effect power transistor BUK7275-100A in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
BUK7275-100A availability: BUK7275-100A in SOT428 (D-PAK).