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BUK7275-100A

Features: ` TrenchMOS™ technology` Q101 compliant` 175 rated` Standard level compatible.Application· Automotive and general purpose power switching:· 12 V, 24 V and 42 V loads· Motors, lamps and solenoids.Specifications Symbol Parameter Conditions Min Max Unit VDS drain-source...

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BUK7275-100A: Features: ` TrenchMOS™ technology` Q101 compliant` 175 rated` Standard level compatible.Application· Automotive and general purpose power switching:· 12 V, 24 V and 42 V loads· Motors, lamps ...

BUK7275-100A Data Sheet

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Part Number:
BUK7275-100A
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

` TrenchMOS™ technology
` Q101 compliant
` 175 rated
` Standard level compatible.


Application

· Automotive and general purpose power switching:
· 12 V, 24 V and 42 V loads
· Motors, lamps and solenoids.


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) - 100 V
VDGR drain-gate voltage (DC) RGS = 20 k - 100 V
VGS gate-source voltage (DC) - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10V;
Figure 2 and 3		 - 21.7 A
Tmb = 100 ; VGS = 10 V; Figure 2 15.4 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3[1] - 87 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 89 W
Tstg storage temperature -55 +175
Tj operating junction temperature -55 +175
Source-drain diode
IDR reverse drain current (DC) Tmb= 25

- 		21.7
A
IDRM peak reverse drain current Tmb= 25 ; pulsed; tp 10 s - 87 A
Avalanche ruggedness
WDSS non-repetitive avalanche energy unclamped inductive load; ID = 14 A;
VDS 100 V; VGS = 10 V;
RGS = 50 ; starting Tj = 25 		- 100 mJ
[1] IDM is limited by chip, not package.



Description

N-channel enhancement mode field-effect power transistor BUK7275-100A in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

BUK7275-100A availability: BUK7275-100A in SOT428 (D-PAK).




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