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BUK7212-55B

Features: ` Very low on-state resistance ` Q101 compliant` 185 rated ` Standard level compatible.Application· Automotive systems ·12 V and 24 V loads· Motors, lamps and solenoids· General purpose power switching.Specifications Symbol Parameter Conditions Min Max Unit VDS drain-sourc...

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BUK7212-55B: Features: ` Very low on-state resistance ` Q101 compliant` 185 rated ` Standard level compatible.Application· Automotive systems ·12 V and 24 V loads· Motors, lamps and solenoids· General purpose p...

BUK7212-55B Data Sheet

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Part Number:
BUK7212-55B
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

` Very low on-state resistance
` Q101 compliant
` 185 rated
` Standard level compatible.


Application

· Automotive systems 
·12 V and 24 V loads
· Motors, lamps and solenoids
· General purpose power switching.




Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) - 55 V
VDGR drain-gate voltage (DC) RGS = 20 k - 55 V
VGS gate-source voltage (DC) - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; [1]

Figure 2 and 3 [2]		 - 83
75		 A
A
Tmb = 100 ; VGS = 10 V; Figure 2 [1] 59 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 335 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 167 W
Tstg storage temperature -55 +185
Tj operating junction temperature -55 +185
Source-drain diode
IDR reverse drain current (DC) Tmb = 25 [1]
[2]		 -
- 		83
75		 A
A
IDRM peak reverse drain current Tmb = 25 ; pulsed; tp 10 s - 335 A
Avalanche ruggedness
EDS(AL)S non-repetitive avalanche energy unclamped inductive load; ID =75 A;
VDS 55 V; VGS = 10 V; RGS = 50 ;
starting Tj = 25 		- 173 mJ
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.


Description

N-channel enhancement mode field-effect power transistor BUK7212-55B in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.




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