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BUK7107-55ATE

Features: · Integrated temperature sensor · Q101 compliant· ESD protection · Standard level compatibleApplication· Variable Valve Timing for engines · Electrical Power Assisted Steering· Automotive and power switching · Fan controlPinoutSpecifications Symbol Parameter Conditions Mi...

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SeekIC No. : 004304370 Detail

BUK7107-55ATE: Features: · Integrated temperature sensor · Q101 compliant· ESD protection · Standard level compatibleApplication· Variable Valve Timing for engines · Electrical Power Assisted Steering· Automotive ...

BUK7107-55ATE Data Sheet

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Part Number:
BUK7107-55ATE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

· Integrated temperature sensor
· Q101 compliant
· ESD protection
· Standard level compatible


Application

· Variable Valve Timing for engines
· Electrical Power Assisted Steering
· Automotive and power switching
· Fan control


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS
 drain-source voltage (DC)  
-
55
V
VDGS
 drain-gate voltage (DC) IDG = 250A
-
55
V
VGS
 gate-source voltage (DC)  
-
±20
V
ID
 drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
-
120
A
-
75
A
    Tmb = 100 °C; VGS = 5 V; Figure 2
-
75
S
IDM
 drain current (peak value) Tmb = 25 °C; pulsed; tp 10 s;Figure 3
-
560
A
Ptot
 total power dissipation Tmb = 25 °C; Figure 1
-
272
W
IDG(CL)
 drain-gate clamping current tp = 5 ms; = 0.01
-
50
mA
IGS(CL)
 gate-source clamping current continuous
-
10
mA
tp = 5 ms; = 0.01
-
50
mA
Visol(FET-TSD)
 FET to temperature sense diode isolation voltage  
-
±100
V
Tstg
 storage temperature  
-55
+175
°C
Tj
 junction temperature  
-55
+175
°C
Source-drain diode
IDR
 reverse drain current (DC) Tmb = 25 °C
-
140
A
-
75
A
IDRM
 pulsed reverse drain current Tmb = 25 °C; tp 10 s
-
560
A
Avalanche ruggedness
EDS(AL)S
 non-repetitive drain-source
avalanche energy		 unclamped inductive load; ID = 68 A; VDS 55 V; VGS = 10 V; RGS =50 ; starting Tmb = 25 °C
-
460
J
Electrostatic Discharge
Vesd
 electrostatic discharge voltage; pins 1,3,5 Human Body Model; C = 100 pF; R = 1.5 k  
6
KV
[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package.


Description

N-channel enhancement mode field-effect power transistor BUK7107-55ATE in a plastic package using TrenchMOS™ technology, featuring both very low on-state resistance, and diode for temperature sensing.

Product availability: BUK7107-55ATE in SOT426 (D2-PAK).




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