Features: ` Low on-state resistance ` Q101 compliant` 175 rated ` Intermediate level compatible.Application· Automotive systems · 12 V loads· Motors, lamps and solenoids · General purpose power switching.Specifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltag...
BUK6213-30A: Features: ` Low on-state resistance ` Q101 compliant` 175 rated ` Intermediate level compatible.Application· Automotive systems · 12 V loads· Motors, lamps and solenoids · General purpose power swi...
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PinoutDescriptionThe BUK6207-30C is designed as one kind of Intermediate level gate drive N-channe...
PinoutDescriptionThe BUK6207-55C is designed as one kind of Intermediate level gate drive N-channe...
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | - | 30 | V | |
VDGR | drain-gate voltage (DC) | RGS = 20 k | - | 30 | V |
VGS | gate-source voltage (DC) | - | ±20 | V | |
ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; [1] Figure 2 and 3 [2] |
- | 64 55 |
A A |
Tmb = 100 ; VGS = 10 V; Figure 2 [2] | 45 | A | |||
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 257 | A |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 102 | W |
Tstg | storage temperature | -55 | +175 | ||
Tj | junction temperature | -55 | +175 | ||
Source-drain diode | |||||
IDR | reverse drain current (DC) | Tmb = 25 [1] [2] |
- - |
64 55 |
A A |
IDRM | peak reverse drain current | Tmb = 25 ; pulsed; tp 10 s | - | 257 | A |
Avalanche ruggedness | |||||
EDS(AL)S | non-repetitive avalanche energy | unclamped inductive load; ID =55 A; VDS 30 V; VGS = 10 V; RGS = 50 ; starting Tj = 25 |
- | 267 | mJ |
N-channel enhancement mode field-effect power transistor BUK6213-30Ain a plastic package using Philips General Purpose Automotive (GPA) TrenchMOS™ technology.