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BUK6213-30A

Features: ` Low on-state resistance ` Q101 compliant` 175 rated ` Intermediate level compatible.Application· Automotive systems · 12 V loads· Motors, lamps and solenoids · General purpose power switching.Specifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltag...

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BUK6213-30A: Features: ` Low on-state resistance ` Q101 compliant` 175 rated ` Intermediate level compatible.Application· Automotive systems · 12 V loads· Motors, lamps and solenoids · General purpose power swi...

BUK6213-30A Data Sheet

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Part Number:
BUK6213-30A
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Description



Features:

` Low on-state resistance
` Q101 compliant
` 175 rated
` Intermediate level compatible.


Application

· Automotive systems
· 12 V loads
· Motors, lamps and solenoids
· General purpose power switching.


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) - 30 V
VDGR drain-gate voltage (DC) RGS = 20 k - 30 V
VGS gate-source voltage (DC) - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; [1]

Figure 2 and 3 [2]		 - 64
55		 A
A
Tmb = 100 ; VGS = 10 V; Figure 2 [2] 45 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 257 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 102 W
Tstg storage temperature -55 +175
Tj junction temperature -55 +175
Source-drain diode
IDR reverse drain current (DC) Tmb = 25 [1]
[2]		 -
- 		64
55		 A
A
IDRM peak reverse drain current Tmb = 25 ; pulsed; tp 10 s - 257 A
Avalanche ruggedness
EDS(AL)S non-repetitive avalanche energy unclamped inductive load; ID =55 A;
VDS 30 V; VGS = 10 V; RGS = 50 ;
starting Tj = 25 		- 267 mJ
[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by bondwires.


Description

N-channel enhancement mode field-effect power transistor BUK6213-30Ain a plastic package using Philips General Purpose Automotive (GPA) TrenchMOS™ technology.




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