BUK6212-40C

The BUK6212-40C is designed as one kind of intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) device that can be used in (1)12 V automotive systems; (2)electric and electro-hydraulic power steering; (3)motors, lamps and solenoids; (4)start-stop micro-hybrid applications; (5)transmission control; (6)ultra high performance power switching applications.

Features of the BUK6212-40C are:(1)AEC Q101 compliant; (2)suitable for standard and logic level gate drive sources; (3)suitable for thermally demanding environments due to 175 °C rating.

The absolute maximum ratings of the BUK6212-40C can be summarized as:(1)drain-source voltage: 40 V;(2)gate-source voltage: -20 to 20 V;(3)drain current: 50 A;(4)peak drain current: 233 A;(5)total power dissipation: 80 W;(6)storage temperature: -55 to 175 °C;(7)junction temperature: -55 to 175 °C;(8)source current: 50 A;(9)peak source current: 233 A;(10)non-repetitive drain-source avalanche energy: 55 mJ. If you want to know more information such as the electrical characteristics about the BUK6212-40C, please download the datasheet in www.seekic.com or www.chinaicmart.com.