BUK6210-55C

The BUK6210-55C is designed as one kind of Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) device that can be used in (1)12 V automotive systems; (2)electric and electro-hydraulic power steering; (3)motors, lamps and solenoids; (4)start-stop micro-hybrid applications; (5)transmission control; (6)ultra high performance power switching; (7)engine management applications.

Features of the BUK6210-55C are:(1)AEC Q101 compliant; (2)suitable for standard and logic level gate drive sources; (3)suitable for thermally demanding environments due to 175 °C rating.

The absolute maximum ratings of the BUK6210-55C can be summarized as:(1)drain-source voltage: 55 V;(2)gate-source voltage: -16 to 16 V;(3)drain current: 78 A;(4)peak drain current: 311 A;(5)total power dissipation: 128 W;(6)storage temperature: -55 to 175 °C;(7)junction temperature: -55 to 175 °C;(8)source current: 78 A;(9)peak source current: 311 A;(10)non-repetitive drain-source avalanche energy: 94 mJ. If you want to know more information such as the electrical characteristics about the BUK6210-55C, please download the datasheet in www.seekic.com or www.chinaicmart.com.