PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 60 V VDGR Drain-gate voltage RGS = 20 k - 60 V ±VGS Gate-source voltage tp 50 s - 15 V ±VGSM Non-repetitive gate-source volt...
BUK573-60B: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 60 V VDGR Drain-gate voltage RGS = 20 k - 60 V ...
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PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSVDGR±VGS ±...
PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSVDGR±VGS ±...
PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSVDGR±VGS ±...
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT | |
VDS |
Drain-source voltage |
- |
- |
60 |
V | |
VDGR |
Drain-gate voltage |
RGS = 20 k |
- |
60 |
V | |
±VGS |
Gate-source voltage |
tp 50 s |
- |
15 |
V | |
±VGSM |
Non-repetitive gate-source voltage |
20 |
V | |||
ID |
Drain current (DC) |
Ths = 25 °C |
- |
-60A 13 8.2 52 |
-60B 12 7.6 4.8 |
A |
ID |
Drain current (DC) |
Ths = 100 °C |
- |
A | ||
IDM |
Drain current (pulse peak value) |
Ths = 25 °C |
- |
A | ||
Ptot |
Total power dissipation |
Ths = 25 °C |
- |
25 |
W | |
Tstg |
Storage temperature |
- |
-55 |
150 |
°C | |
Tj |
Junction Temperature |
- |
- |
150 |
°C |
N-channel enhancement mode logic level field-effect power transistor BUK573-60B in a plastic full-pack envelope.
BUK573-60B is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.