BUK573-60B Selling Leads, Price trend, BUK573-60B DataSheet download, circuit diagram from SeekIC.com

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 60 V VDGR Drain-gate voltage RGS = 20 k - 60 V ±VGS Gate-source voltage tp 50 s - 15 V ±VGSM Non-repetitive gate-source volt...

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BUK573-60B: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 60 V VDGR Drain-gate voltage RGS = 20 k - 60 V ...

BUK573-60B Data Sheet

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Part Number:: BUK573-60B
Supply Ability:: 5000

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Upload time: 2024/11/23

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Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.		UNIT
V_DS	Drain-source voltage	-	-	60		V
V_DGR	Drain-gate voltage	R_GS = 20 k	-	60		V
±V_GS	Gate-source voltage	t_p 50 s	-	15		V
±V_GSM	Non-repetitive gate-source voltage			20		V
I_D	Drain current (DC)	T_hs = 25 °C	-	-60A 13 8.2 52	-60B 12 7.6 4.8	A
I_D	Drain current (DC)	T_hs = 100 °C	-			A
I_DM	Drain current (pulse peak value)	T_hs= 25 °C	-			A
P_tot	Total power dissipation	T_hs = 25 °C	-	25		W
T_stg	Storage temperature	-	-55	150		°C
T_j	Junction Temperature	-	-	150		°C

Description

N-channel enhancement mode logic level field-effect power transistor BUK573-60B in a plastic full-pack envelope.
BUK573-60B is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.

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