Features: Power TrenchMOSOvertemperature protectionOverload protectionInput-source voltage resets latched protection circuitry.Inputusedtocontroloutputstageand supply overload protection circuits5 V logic compatible input levelCurrent limitingESD protection for all pinsOverfatigue clamping for tur...
BUK1M200-50SDLD: Features: Power TrenchMOSOvertemperature protectionOverload protectionInput-source voltage resets latched protection circuitry.Inputusedtocontroloutputstageand supply overload protection circuits5 V...
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Features: *Vertical power DMOS output stage*Low on-state resistance*Overload protection against ov...
Power TrenchMOS
Overtemperature protection
Overload protection
Input-source voltage resets latched protection circuitry.
Inputusedtocontroloutputstageand supply overload protection circuits
5 V logic compatible input level
Current limiting
ESD protection for all pins
Overfatigue clamping for turn off of inductive loads
Low operating input current permits direct drive by micro-controller.
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage[1] |
- | 50 | V | |
II | input current | clamping | - | 3 | mA |
Ptot | tatal power dissipation[2] |
Tsp25; Figure 4 | - | 9.4 | W |
IIMS | non-repetitive peak input current | tp1 ms | - | 10 | mA |
Tstg | storage temperature | -55 | +150 | ||
Tj | junction temperature[3] |
normal operation | - | 150 | |
Overvoltage clamping[4] | |||||
EDS(CL)S | non-repetitive drain-source clamping energy[5] | Tamb=25; IDMID(lim) (refer to Table 5); inductive load | - | 100 | mJ |
EDS(CL)R | repetitive drain-source clamping[5] |
Tsp125;IDM=50mA;f=250Hz | - | 5 | mJ |
Overload protection[6] | |||||
VDS(prot) | protected drain-source voltage | VIS4V | - | 35 | V |
Reverse diode | |||||
IS | source(diode forward) current | Tsp25;VIS=0V | - | 2 | A |
Electrostatic discharge | |||||
Vesd | electrostatic discharge voltage | C=250 pF; R=1.5k | - | 2 | kV |