BUJ103AX,127, US $ .35-.51 , NXP Semiconductors, BUJ103AX,127 DataSheet download, circuit diagram from SeekIC.com

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BUJ103AX,127: Transistors Bipolar (BJT) SILICON DIFFUSED POWER TRANSISTOR

BUJ103AX,127 Data Sheet

US $ .35~.51 / Piece | Get Latest Price

Part Number:: BUJ103AX,127
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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1~25
25~100
100~250

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$.51
$.46
$.4
$.35

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Upload time: 2025/3/13

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BUJ100 evaluate
PinoutSpecifications SYMBOL PARAMETER CONDTIONS MIN. MAX. UNIT VCESMVCEOVCBOICI...
BUJ100,126 evaluate
US $.07 - .07 / Piece

Transistors Bipolar (BJT) Trans GP BJT NPN 400V 1A 3-Pin SPT
BUJ100,412 evaluate
US $.14 - .25 / Piece

Transistors Bipolar (BJT) Trans GP BJT NPN 400V 1A 3-Pin SPT

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	400 V
Emitter- Base Voltage VEBO :	700 V	Maximum DC Collector Current :	8 A
DC Collector/Base Gain hfe Min :	10	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-186A	Packaging :	Tube

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Collector- Emitter Voltage VCEO Max : 400 V
Packaging : Tube
Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 10
Emitter- Base Voltage VEBO : 700 V
Package / Case : SOT-186A

Parameters:

Technical/Catalog Information	BUJ103AX,127
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	400V
Current - Collector (Ic) (Max)	4A
Power - Max	26W
DC Current Gain (hFE) (Min) @ Ic, Vce	12.5 @ 3A, 5V
Vce Saturation (Max) @ Ib, Ic	1V @ 600mA, 3A
Frequency - Transition	-
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-220F
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BUJ103AX,127 BUJ103AX,127

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BUJ103AX,127

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