Features: · Simple-sWitch-Off Transistor (SWOT)· HIGH SPEED technology· Planar passivation· 100 kHz switching rate· Very low switching losses· Very low dynamic saturation· Very low operating temperature· Optimized RBSOA· High reverse voltageApplicationElectronic lamp ballast circuitsSwitch-mode po...
BUF646A: Features: · Simple-sWitch-Off Transistor (SWOT)· HIGH SPEED technology· Planar passivation· 100 kHz switching rate· Very low switching losses· Very low dynamic saturation· Very low operating tempera...
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Parameter | Test Conditions | Type | Symbol | Value | Unit |
Collector-emitter voltage | BUF646 | VCEO | 400 | V | |
BUF646A | VCEO | 450 | V | ||
BUF646 | VCES | 850 | V | ||
BUF646A | VCES | 1000 | V | ||
Emitter-base voltage | VEBO | 9 | V | ||
Collector current | IC | 7 | A | ||
Collector peak current | ICM | 14 | A | ||
Base current | IB | 3 | A | ||
Base peak current | IBM | 5 | A | ||
Total power dissipation | Tcase 3 25 | Ptot | 70 | A | |
Junction temperature | Tj | 150 | |||
Storage temperature range | Tstg | 65 to +150 |