Transistors Bipolar (BJT) NPN High Volt Power
BUF410A: Transistors Bipolar (BJT) NPN High Volt Power
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 450 V |
Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 15 A |
Configuration : | Single | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-247 |
Packaging : | Tube |
Symbol |
Parameter |
Value |
Unit |
VCEV |
Collector-Emitter Voltage (VBE = -1.5V) |
1000 |
V |
VCEO |
Collector-Emitter Voltage (IB = 0) |
450 |
V |
VEBO |
Emitter-Base Voltage (IC = 0) |
7 |
V |
IC |
Collector Current |
15 |
A |
ICM |
Collector Peak Current (tp < 5 ms) |
30 |
A |
IB |
Base Current |
3 |
A |
IBM |
Base Peak Current (tp < 5 ms) |
4.5 |
A |
Ptot |
Total Dissipation at Tc = 25 1 |
125 |
W |
Tstg |
Storage Temperature |
-65 to 150 |
|
Tj |
Max. Operating Junction Temperature |
150 |