BUF410A

Transistors Bipolar (BJT) NPN High Volt Power

product image

BUF410A Picture
SeekIC No. : 00211816 Detail

BUF410A: Transistors Bipolar (BJT) NPN High Volt Power

floor Price/Ceiling Price

Part Number:
BUF410A
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/14

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 450 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 15 A
Configuration : Single Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-247
Packaging : Tube    

Description

Maximum Operating Frequency :
DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Packaging : Tube
Emitter- Base Voltage VEBO : 7 V
Maximum DC Collector Current : 15 A
Package / Case : TO-247
Collector- Emitter Voltage VCEO Max : 450 V


Features:

SGS-THOMSONPREFERRED SALESTYPE
HIGH VOLTAGE CAPABILITY
VERY HIGH SWITCHING SPEED
MINIMUM LOT-TO-LOT SPREADFOR RELIABLE OPERATION
LOW BASE-DRIVE REQUIREMENTS





Application

SWITCH MODE POWER SUPPLIES
MOTOR CONTROL





Specifications

Symbol
Parameter
Value
Unit
VCEV
Collector-Emitter Voltage (VBE = -1.5V)
1000
V
VCEO
Collector-Emitter Voltage (IB = 0)
450
V
VEBO
Emitter-Base Voltage (IC = 0)
7
V
IC
Collector Current
15
A
ICM
Collector Peak Current (tp < 5 ms)
30
A
IB
Base Current
3
A
IBM
Base Peak Current (tp < 5 ms)
4.5
A
Ptot
Total Dissipation at Tc = 25 1
125
W
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150





Description

The BUF410A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.

The BUF series BUF410A is designed for use in high-frequency power supplies and motor control applications.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Static Control, ESD, Clean Room Products
Sensors, Transducers
Crystals and Oscillators
Cables, Wires
Semiconductor Modules
View more