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BUD42DG

Transistors Bipolar (BJT) 4A 650V 25W NPN

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SeekIC No. : 00212004 Detail

BUD42DG: Transistors Bipolar (BJT) 4A 650V 25W NPN

BUD42DG Data Sheet

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Part Number:
BUD42DG
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 350 V
Emitter- Base Voltage VEBO : 9 V Maximum DC Collector Current : 4 A
DC Collector/Base Gain hfe Min : 8 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Maximum DC Collector Current : 4 A
DC Collector/Base Gain hfe Min : 8
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 350 V
Emitter- Base Voltage VEBO : 9 V


Parameters:

Technical/Catalog InformationBUD42DG
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)350V
Current - Collector (Ic) (Max)4A
Power - Max25W
DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 1A, 2V
Vce Saturation (Max) @ Ib, Ic200mV @ 500mA, 2A
Frequency - Transition-
Current - Collector Cutoff (Max)100A
Mounting TypeSurface Mount
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BUD42DG
BUD42DG



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