BU508DFI

Transistors Switching (Resistor Biased) NPN General Purpose

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SeekIC No. : 00223606 Detail

BU508DFI: Transistors Switching (Resistor Biased) NPN General Purpose

floor Price/Ceiling Price

Part Number:
BU508DFI
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/9/27

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Mounting Style : SMD/SMT Package / Case : SOT-93-3
Collector- Emitter Voltage VCEO Max : 700 V Continuous Collector Current : 8 A
Peak DC Collector Current : 8000 mA Power Dissipation : 50 W
Maximum Operating Temperature : + 150 C Packaging : Tube    

Description

Typical Input Resistor :
Typical Resistor Ratio :
Maximum Operating Frequency :
Transistor Polarity : NPN
Power Dissipation : 50 W
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Configuration : Single
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 700 V
Continuous Collector Current : 8 A
Package / Case : SOT-93-3
Peak DC Collector Current : 8000 mA


Application

HORIZONTALDEFLECTIONFOR COLOUR TV




Specifications

Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE =0) 1500 V
VCEO Collector-Emitter Voltage (IB = 0) 700 V
VEBO Emitter-Base Voltage (IC =0) 10 V
IC Collector Current 8 A
ICM Collector Peak Current (tp <5ms) 15 A
TO - 3 TO - 218 ISOWATT218
Ptot Total Dissipation at TC =25 150 125 50 W
Tstg Storage Temperature -65 to 175 -65 to 150 -65 to 150
Tj Max. Operating Junction Temperature 175 150 150
Rthj-case Thermal Resistance Junction-caseMax 1 1 2.5 /W





Description

The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switchingspeeds.




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