Transistors Bipolar (BJT) Hi Vltg NPN Pwr transistor
BU508AW: Transistors Bipolar (BJT) Hi Vltg NPN Pwr transistor
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 700 V |
Emitter- Base Voltage VEBO : | 9 V | Maximum DC Collector Current : | 8 A |
Configuration : | Single | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-247 |
Packaging : | Tube |
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCESM VCEO IC ICM IB IBM Ptot Tstg Tj |
Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature |
VBE = 0 V Tmb 25 |
- |
1500 |
V |
Technical/Catalog Information | BU508AW |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 700V |
Current - Collector (Ic) (Max) | 8A |
Power - Max | 125W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 100mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 1.6A, 4.5A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 200A |
Mounting Type | Through Hole |
Package / Case | TO-247 |
Packaging | Tube |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BU508AW BU508AW 497 7196 5 ND 49771965ND 497-7196-5 |