BU508AW

Maximum Operating Frequency :
DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Packaging : Tube
Maximum DC Collector Current : 8 A
Package / Case : TO-247
Emitter- Base Voltage VEBO : 9 V
Collector- Emitter Voltage VCEO Max : 700 V


Pinout






Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCESM VCEO IC ICM IB IBM Ptot Tstg Tj	Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature	VBE = 0 V Tmb 25	- - - - - - - -65 -	1500 700 8 15 4 6 125 150 150	V V A A A A W

Description

High voltage, high-speed switching npn transistors BU508AW in a plastic envelope, primarily for use in horizontal deflection circuits of colour television receivers.




Parameters:

Technical/Catalog Information	BU508AW
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	700V
Current - Collector (Ic) (Max)	8A
Power - Max	125W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic	1V @ 1.6A, 4.5A
Frequency - Transition	-
Current - Collector Cutoff (Max)	200A
Mounting Type	Through Hole
Package / Case	TO-247
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BU508AW BU508AW 497 7196 5 ND 49771965ND 497-7196-5