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BU508AFTBTU

Transistors Bipolar (BJT) NPN Triple Diffused Planar Silicon

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SeekIC No. : 00210762 Detail

BU508AFTBTU: Transistors Bipolar (BJT) NPN Triple Diffused Planar Silicon

BU508AFTBTU Data Sheet

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Part Number:
BU508AFTBTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 700 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 5 A
DC Collector/Base Gain hfe Min : 225 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3PF Packaging : Tube    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum DC Collector Current : 5 A
Collector- Emitter Voltage VCEO Max : 700 V
DC Collector/Base Gain hfe Min : 225
Package / Case : TO-3PF


Parameters:

Technical/Catalog InformationBU508AFTBTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)700V
Current - Collector (Ic) (Max)5A
Power - Max60W
DC Current Gain (hFE) (Min) @ Ic, Vce2.25 @ 4.5A, 5V
Vce Saturation (Max) @ Ib, Ic1V @ 2A, 4.5A
Frequency - Transition-
Current - Collector Cutoff (Max)1mA
Mounting TypeThrough Hole
Package / CaseTO-3PF
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BU508AFTBTU
BU508AFTBTU



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