BU508AFI

DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Tube
Maximum DC Collector Current : 8 A
Emitter- Base Voltage VEBO : 10 V
Package / Case : SOT-93
Collector- Emitter Voltage VCEO Max : 700 V
Maximum Operating Frequency : 7 MHz


Application

HORIZONTALDEFLECTIONFOR COLOUR TV




Specifications

Symbol	Parameter	Value			Unit
VCES	Collector-Emitter Voltage (VBE =0)	1500			V
VCEO	Collector-Emitter Voltage (IB = 0)	700			V
VEBO	Emitter-Base Voltage (IC =0)	10			V
IC	Collector Current	8			A
ICM	Collector Peak Current (tp <5ms)	15			A
		TO - 3	TO - 218	ISOWATT21
Ptot	Total Dissipation at Tc =25	150	125	50	W
Tstg	Storage Temperature	-65 to 175	-65 to 150	-65 to 150
Tj	Max. Operating Junction Temperature	175	150	150
Rthj-case	Thermal Resistance Junction-case Max	1	1	2.5	/W

Description

The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switchingspeeds.




Parameters:

Technical/Catalog Information	BU508AFI
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	700V
Current - Collector (Ic) (Max)	8A
Power - Max	150W
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Vce Saturation (Max) @ Ib, Ic	1V @ 2A, 4.5A
Frequency - Transition	7MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	ISOWATT-218-3
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BU508AFI BU508AFI