BU508A

DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Tube
Maximum DC Collector Current : 8 A
Emitter- Base Voltage VEBO : 10 V
Package / Case : SOT-93
Collector- Emitter Voltage VCEO Max : 700 V
Maximum Operating Frequency : 7 MHz


Application

High Collector-Base Voltage(V_CBO=1500V)
High Speed Switching




Specifications

Characteristic	Symbol	Rating	Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25) Junction Temperature Storage Temperature	VCBO VCEO VEBO IC PC Tj Tstg	1500 800 6 5 50 150 -50~150	V V V A W

Parameters:

Technical/Catalog Information	BU508A
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	700V
Current - Collector (Ic) (Max)	8A
Power - Max	150W
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Vce Saturation (Max) @ Ib, Ic	1V @ 2A, 4.5A
Frequency - Transition	7MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BU508A BU508A 497 2599 5 ND 49725995ND 497-2599-5