PinoutSpecifications SYMBOL PARAMETER CONDTIONS MIN. MAX. UNIT VCESMVCEOICICMIBIBM-IBMPtotTstgTj Collector to emitter voltageCollector to emitter voltage (open base) Collector current (DC)Collector current peak valueBase current (DC)Reverse base currentReverse base current pe...
BU4515DF: PinoutSpecifications SYMBOL PARAMETER CONDTIONS MIN. MAX. UNIT VCESMVCEOICICMIBIBM-IBMPtotTstgTj Collector to emitter voltageCollector to emitter voltage (open base) Collector ...
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SYMBOL | PARAMETER | CONDTIONS |
MIN. |
MAX. |
UNIT |
VCESM |
Collector to emitter voltage Collector to emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Reverse base current Reverse base current peak value1 Total power dissipation Storage temperature Junction temperature |
VBE=0V Ths25 |
- - - - - - - - - -55 - |
1500 800 9 20 5 7.5 6 45 150 150 |
V V A A A A A W |
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor BU4515DF with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features of BU4515DF exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.