BU4508DF

Pinout






Specifications

SYMBOL	PARAMETER	CONDTIONS	MIN.	MAX.	UNIT
VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj	Collector to emitter voltage Collector to emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Reverse base current Reverse base current peak value1 Total power dissipation Storage temperature Junction temperature	VBE=0V Ths25	- - - - - - - - - -65 -	1500 800 8 15 4 6 5 45 150 150	V V A A A A A W

Description

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor BU4508DF with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features of BU4508DF exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.