BU407HTU

Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

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SeekIC No. : 00212505 Detail

BU407HTU: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

floor Price/Ceiling Price

Part Number:
BU407HTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 150 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 7 A
Configuration : Single Maximum Operating Frequency : 10 MHz
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Collector- Emitter Voltage VCEO Max : 150 V
Maximum Operating Frequency : 10 MHz
Maximum DC Collector Current : 7 A


Parameters:

Technical/Catalog InformationBU407HTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)150V
Current - Collector (Ic) (Max)7A
Power - Max60W
DC Current Gain (hFE) (Min) @ Ic, Vce-
Vce Saturation (Max) @ Ib, Ic1.2V @ 800mA, 5A
Frequency - Transition10MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BU407HTU
BU407HTU



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