Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
BU407HTU: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 150 V | ||
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 7 A | ||
Configuration : | Single | Maximum Operating Frequency : | 10 MHz | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
Technical/Catalog Information | BU407HTU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 150V |
Current - Collector (Ic) (Max) | 7A |
Power - Max | 60W |
DC Current Gain (hFE) (Min) @ Ic, Vce | - |
Vce Saturation (Max) @ Ib, Ic | 1.2V @ 800mA, 5A |
Frequency - Transition | 10MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 (Straight Leads) |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BU407HTU BU407HTU |