BU2527DX

Pinout






Specifications

SYMBOL	PARAMETER	CONDTIONS	MIN.	MAX.	UNIT
VCESM VCEO IC ICM IB IBM -IB(AV) IBM Ptot Tstg Tj	Collector to emitter voltage Collector to emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value1 Total power dissipation Storage temperature Junction temperature	VBE=0V average over any 20 ms period Ths25	- - - - - - - - - -65 -	1500 800 12 30 8 12 200 7 45 150 150	V V A A A A mA A W

Description

New generation, high-voltage, high-speed switching npn transistor BU2527DX with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance.

The BU2527DX is designed as one kind of new generation, high-voltage, high-speed switching silicon diffused power transistor device that integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance.

The absolute maximum ratings of the BU2527DX can be summarized as:(1)Collector-emitter voltage peak value: 1500 V;(2)Collector-emitter voltage (open base): 800 V;(3)Collector current (DC): 12 A;(4)Collector current peak value: 30 A;(5)Base current (DC): 8 A;(6)Base current peak value: 12 A;(7)Reverse base current: 200 mA;(8)Reverse base current peak value: 7 A;(9)Total power dissipation: 45 W;(10)Storage temperature: -65 to 150 °C. If you want to know more information about the BU2527DX, please download the datasheet in www.seekic.com or www.chinaicmart.com .