BU2527DF

Pinout






Specifications

SYMBOL	PARAMETER	CONDTIONS	MIN.	MAX.	UNIT
VCESM VCEO IC ICM IB IBM -IB(AV) IBM Ptot Tstg Tj	Collector to emitter voltage Collector to emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value1 Total power dissipation Storage temperature Junction temperature	VBE=0V average over any 20 ms period Ths25	- - - - - - - - - -65 -	1500 800 12 30 8 12 200 7 45 150 150	V V A A A A mA A W

Description

The BU2527DF is designed as one kind of new generation, high-voltage, high-speed switching npn transistor. The absolute maximum ratings of the BU2527DF can be summarized as:(1)Collector-emitter voltage peak value: 1500 V;(2)Collector-emitter voltage (open base): 800 V;(3)Collector current (DC): 12 A;(4)Collector current peak value: 30 A;(5)Total power dissipation: 45 W;(6)Collector-emitter saturation voltage: 5.0 V;(7)Collector saturation current: 6.0 A;(8)Storage time: 1.7 to 2.0 us.

The electrical characteristics of BU2527DF can be summarized as:(1)Emitter cut-off current: 110 mA;(2)Base-emitter resistance: 55 ;(3)Emitter-base breakdown voltage: 7.5 to 13.5 V;(4)Collector-emitter sustaining voltage: 800 V;(5)Collector-emitter saturation voltage: 5.0 V;(6)Base-emitter saturation voltage: 1.1 V;(7)Diode forward voltage: 1.6 to 2.0 V;(8)Collector capacitance: 145 pF;(9)Anti-parallel diode forward recovery voltage: 16 V;(10)Anti-parallel diode forward recovery time: 410 ns. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com.

New generation, high-voltage, high-speed switching npn transistor BU2527DF with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance.