Features: ·HIGH SURGE CAPABILITY ·HIGH ON-STATE CURRENT ·HIGH STABILITY AND RELIABILITY·BTW68 Serie : INSULATED VOLTAGE = 2500V(RMS)( UL RECOGNIZED : E81734)Specifications Symbol Parameter Value Unit IT(RMS) RMS on-state current(180° conduction angle) BTW 66BTW 67 Tc=75°CTc...
BTW 68: Features: ·HIGH SURGE CAPABILITY ·HIGH ON-STATE CURRENT ·HIGH STABILITY AND RELIABILITY·BTW68 Serie : INSULATED VOLTAGE = 2500V(RMS)( UL RECOGNIZED : E81734)Specifications Symbol Parameter...
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Symbol |
Parameter |
Value |
Unit | ||
IT(RMS) |
RMS on-state current (180° conduction angle) |
BTW 66 BTW 67 |
Tc=75°C Tc=75°C |
30 35 |
A |
IT(AV) | Average on-state current (180° conductionangle,single phase circuit) | BTW 66 BTW 67 |
Tc=75°C Tc=75°C |
19 22 |
A |
ITSM |
Non repetitive surge peak on-state current ( Tj initial = 25 ) | BTW 66 BTW 67 |
tp = 8.3 ms
|
420 |
A
|
BTW 66 BTW 67 |
tp=10 ms |
400 | |||
I2t |
I2t value | BTW 66 BTW 67 |
tp = 10 ms |
820 | |
dI/dt |
Critical rate of rise of on-state current Gate supply : IG = 100 mA diG/dt = 1 A/s |
Repetitive F = 100 Hz |
100 |
A/s | |
Tstg Tj |
Storage and operating junction temperature range |
- 40 to + 150 - 40 to + 125 |
| ||
Tl |
Maximum lead temperature for soldering during 10 s at 4.5 mm from case |
230 |
Symbol |
Parameter |
BTW 68 |
BTW 68 / BTW 68 N |
Unit | ||||
400 |
600 |
700 |
800 |
1000 | 1200 | |||
VDRM VRRM |
Repetitive peak off-state voltage Tj = 125 |
400 |
600 |
700 |
800 |
1000 | 1200 |
V |
The BTW 68 (N) Family of Silicon Controlled Rectifiersuses a high performance glass passivated technology.
This general purpose Family of Silicon Controlled Rectifiers BTW 68 is designed for power supplies up to 400Hz on resistive or inductive load.