BTW48

Features: SpecificationsDescriptionThe BTW48 of silcion controlled rectifiers uses a high performance glass passivated technology. BTW48 is designed for power supplies up to 400 Hz on resistive or inductive load. There are some features as follows. First is high surge capability. The second is hig...

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SeekIC No. : 004303104 Detail

BTW48: Features: SpecificationsDescriptionThe BTW48 of silcion controlled rectifiers uses a high performance glass passivated technology. BTW48 is designed for power supplies up to 400 Hz on resistive or i...

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Part Number:
BTW48
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:






Specifications






Description

The BTW48 of silcion controlled rectifiers uses a high performance glass passivated technology. BTW48 is designed for power supplies up to 400 Hz on resistive or inductive load. There are some features as follows. First is high surge capability. The second is high on-state current. The last one is high stability and reliability.

Whar comes next is about the absolute maximum ratings of BTW48. The IT(RMS) (RMS on-state current (180°conduction angle)) is 50 A at TC=85. The IT(AV) (average on-state current (180°conduction angle, single phase circuit)) is 32 A at TC=85. The ITSM (non repetitive surge peak on-state current Tj initial=25)) is 520 A at tp=8.3 ms and 500 A at tp=10 ms. The di/dt (critical rate of rise of on-state current) is 100 A/s when gate supply: IG=600 mA, diG/dt=1 A/s. The Tstg (storage temperature range) is from -40 to +150. The Tj (operating junction temperature range) is from -40 to +125. The TL (maximum lead temperature for soldering during 10 s at 4.5 mm from case) is 230.

The following is about the electrical characteristics of BTW48. The maximum IGT is 60 mA at VD=12 V DC, RL=33, Tj=25. The maximum VGT is 1.5 V at VD=12 V DC, RL=33, Tj=25. The minimum VGD is 0.2 V at VD=VDRM, RL=3.3 k, Tj=125. The typical IL is 60 mA at IG=1.2 IGT, Tj=25. The typical IH is 30 mA when IT=500 mA gate open. The maximum VTM is 1.8 V at ITM=100 A, tp=380 s.






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