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BTS 917

Features: •Logic Level Input•Input Protection (ESD)•Thermal Shutdown•Overload protection•Short circuit protection•Overvoltage protection•Current limitation•Maximum current adjustable with external resistor•Current sense•Status feedback wi...

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SeekIC No. : 004303056 Detail

BTS 917: Features: •Logic Level Input•Input Protection (ESD)•Thermal Shutdown•Overload protection•Short circuit protection•Overvoltage protection•Current limitation&...

BTS 917 Data Sheet

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Part Number:
BTS 917
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Description



Features:

•Logic Level Input
•Input Protection (ESD)
•Thermal Shutdown
•Overload protection
•Short circuit protection
•Overvoltage protection
•Current limitation
•Maximum current adjustable with external resistor
•Current sense
•Status feedback with external input resistor
•Analog driving possible


Application

•All kinds of resistive, inductive and capacitive loads in switching or
  linear applications
•µC compatible power switch for 12 V and 24 V DC applications
•Replaces electromechanical relays and discrete circuits


Specifications

Parameter Symbol
Unit
Value
Drain source voltage VDS
60
V
Drain source voltage for short circuit protection
RCC = 0 Ω
without RCC

VDS(SC)
15
50
Continuous input current 1)
-0.2V VIN 10V
VIN < -0.2V or VIN > 10V
IIN




no limit

| IIN | 2
mA
Operating temperature
Tj
- 40 ... +150
 °C
Storage temperature
Tstg
- 55 ... +150
Power dissipation
TC = 25 °C
Ptot
50
 W
Unclamped single pulse inductive energy
ID(ISO) = 19 A
EAS
1000
 mJ
Electrostatic discharge voltage (Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
VESD
3000
V
Load dump protection VLoadDump2) = VA + VS
VIN=low or high; VA=13.5 V
td = 400 ms, RI= 2 Ω, ID=0,5*19A
td = 400 ms, RI= 2 Ω, ID= 19A
VLD




 
 
75
70
 V
DIN humidity category, DIN 40 040
E
IEC climatic category; DIN IEC 68-1
40/150/56



Description

N channel vertical power FET in Smart SIPMOS® chip BTS 917 on chip technology. Fully protected by embedded protected functions.


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