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BTS 716G

Application• µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads• All types of resistive, inductive and capacitve loads• Most suitable for loads with high inrush currents, so as lamps• Replaces electromechanical relays, fuses a...

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SeekIC No. : 004303051 Detail

BTS 716G: Application• µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads• All types of resistive, inductive and capacitve loads• Most suitabl...

BTS 716G Data Sheet

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Part Number:
BTS 716G
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

• µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads
• All types of resistive, inductive and capacitve loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 6)
Vbb
43
V
Supply voltage for full short circuit protection
Tj,start =-40 ...+150°C
Vbb
36
V
Load current (Short-circuit current, see page 6)
IL
self-limited
A
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V
RI2) = 2 , td = 400 ms; IN= low or high,
each channel loaded with RL = 13.5 ,
VLoaddump3)
60
V
Operating temperature range
Storage temperature range
Tj
stg
-40 ...+150
-55 ...+150
Power dissipation (DC)4)                                            Ta = 25°C:
(all channels active)                                                    Ta = 85°C:
Ptot
3.6
1.9
W
Maximal switchable inductance, single pulse
Vbb =12V, Tj,start =150°C4), see diagrams on page 10
IL = 2.3 A, EAS = 76 mJ, 0                                       one channel:
IL = 3.3 A, EAS = 182 mJ, 0                       two parallel channels:
IL = 4.7 A, EAS = 460 mJ, 0                       four parallel channels:
ZL
21
25
30
mH
Electrostatic discharge capability (ESD) IN:
(Human Body Model) ST:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5k; C=100pF
VESD
1.0
4.0
8.0
kV
Input voltage (DC) see internal circuit diagram page 9
Current through input pin (DC)
Pulsed current through input pin5)
Current through status pin (DC)
VIN
IIN
IIN
IST
-10 ... +16
±0.3
±5.0
±5.0
V
mA



Description

The BTS 716G features are as follows:

• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and iagnostic feedback, monolithically integrated in Smart SIPMOS® technology.
• Providing embedded protective functions




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