Features: *N channel *Logic level *Enhancement mode *Temperature sensor with thyristor characteristic *The drain pin is electrically shorted to the tabPinoutSpecifications Parameter Symbol Values Unit Drain-source voltage VDS 50 V Drain-gate voltage, RGS = 20 k VDGR 50 Gate...
BTS 131: Features: *N channel *Logic level *Enhancement mode *Temperature sensor with thyristor characteristic *The drain pin is electrically shorted to the tabPinoutSpecifications Parameter Symbol Va...
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Parameter | Symbol | Values | Unit |
Drain-source voltage | VDS | 50 | V |
Drain-gate voltage, RGS = 20 k | VDGR | 50 | |
Gate-source voltage | VGS | ±10 | |
Continuous drain current, TC = 25 C | ID | 25 | A |
ISO drain current | ID-ISO | 6.5 | |
TC = 85 C, VDS = 10 V, VDS = 0.5 V | |||
Pulsed drain current, TC = 25 C | ID puls | 100 | |
Short circuit current, Tj = 55 ... + 150 C | ISC | 80 | |
Short circuit dissipation, Tj = 55 ... + 150 C | PSCmax | 1200 | W |
VDS 50 V / VDS 15 V | |||
Power dissipation | Ptot | 75 | |
Operating and storage temperature range | Tj, Tstg | 55 ... + 150 | C |
DIN humidity category, DIN 40 040 | E | ||
IEC climatic category, DIN IEC 68-1 | 55/150/56 | ||
Thermal resistance | K/W | ||
Chip-case | Rth JC | 1.67 | |
Chip-ambient | Rth JA | 75 |