BTS6510 Selling Leads, Price trend, BTS6510 DataSheet download, circuit diagram from SeekIC.com

Features: • Overload protection• Current limitation• Short circuit protection• Overtemperature protection• Overvoltage protection (including load dump)• Clamp of negative voltage at output• Fast deenergizing of inductive loads 1)• Low ohmic inverse c...

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SeekIC No. : 004303085 Detail

BTS6510: Features: • Overload protection• Current limitation• Short circuit protection• Overtemperature protection• Overvoltage protection (including load dump)• Clamp of ...

BTS6510 Data Sheet

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Part Number:: BTS6510
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Product Details

Description

Features:

• Overload protection
• Current limitation
• Short circuit protection
• Overtemperature protection
• Overvoltage protection (including load dump)
• Clamp of negative voltage at output
• Fast deenergizing of inductive loads 1)
• Low ohmic inverse current operation
• Diagnostic feedback with load current sense
• Open load detection via current sense
• Loss of Vbb protection2)
• Electrostatic discharge (ESD) protection

Application

• Power switch with current sense diagnostic feedback for 12 V and 24 V DC grounded loads
• Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads
• Replaces electromechanical relays, fuses and discrete circuits

Specifications

Parameter	Symbol	Values	Unit
Supply voltage (overvoltage protection see page 4)	V_bb	42	V
Supply voltage for full short circuit protection T_j,start =-40 ...+150°C:(EAS limitation see diagram on page 9)	V_bb	34	V
Load current (Short-circuit current, see page 5)	I_L	self-limited	A
Load dump protection²⁾ V_LoadDump = U_A + V_s, U_A = 13.5 V R_I⁵⁾ = 2 ,RL=0.54, t_d = 200 ms; IN,IS= open or grounded	V_{Load dump}⁶⁾	75	V
Operating temperature range Storage temperature range	T_j T_stg	-40 ...+150 -55 ...+150	°C
Power dissipation (DC), TC 25 °C	P_tot	170	W
Inductive load switch-off energy dissipation, single pulse V_bb =12V, T_j,start =150°C, T_C = 150°C const., I_L = 20 A, Z_L = 15 mH, 0, (see diagrams on page 9)	E_AS	1.5	J
Electrostatic discharge capability (ESD) Human Body Model acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993, C = 100 pF, R = 1.5 k	V_ESD	4	kV
Current through input pin (DC) Current through current sense status pin (DC) see internal circuit diagrams on page 7 and 8	I_IN I_IS	+15, -250 +15, -250	mA

Description

N channel vertical power FET BTS6510 with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS^® chip on chip technology. Providing embedded protective functions.

BTS6510

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