BTS650P

Type: High Side
Input Type: Non-Inverting
Number of Outputs: 1
Mounting Type: Through Hole
Packaging: Tube
Operating Temperature: -40°C ~ 150°C
Current - Output / Channel: 70A
Manufacturer: Infineon Technologies
Voltage - Supply: 5 V ~ 34 V
Series: PROFET®
Supplier Device Package: P-TO220-7
Package / Case: TO-220-7 Formed Leads
On-State Resistance: 4.4 mOhm
Current - Peak Output: 130A


Features:

• Overload protection
• Current limitation
• Short circuit protection
• Over temperature protection
• Over voltage protection (including load dump)
• Clamp of negative voltage at output
• Fast deenergizing of inductive loads 1)
• Low ohmic inverse current operation
• Reversave (Reverse battery protection)
• Diagnostic feedback with load current sense
• Open load detection via current sense
• Loss of Vbb protection 2)
• Electrostatic discharge (ESD) protection


Application

• Power switch with current sense diagnostic feedback for 12 V and 24 V DC grounded loads
• Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads
• Replaces electromechanical relays, fuses and discrete circuits


Specifications

Parameter	Symbol	Values	Unit
Supply voltage (overvoltage protection see page 4)	Vbb	42	V
Supply voltage for full short circuit protection Tj,start =-40 ...+150°C	Vbb	34	V
Load current (Short-circuit current, see page 5)	IL	self-limited	A
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI6) = 2 ,RL=0.1, td = 200 ms; IN,IS= open or grounded	VLoad dump6)	75	V
Operating temperature range Storage temperature range	Tj Tstg	-40 ...+150 -55 ...+150	°C
Power dissipation (DC), TC 25 °C	Ptot	170	W
Inductive load switch-off energy dissipation, single pulse Vbb =12V, Tj,start =150°C, TC = 150°C const., IL = 20 A, ZL = 15 mH, 0, see diagrams on page 10	EAS	1.5	J
Electrostatic discharge capability (ESD) Human Body Model acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993, C = 100 pF, R = 1.5 k	VESD	4	kV
Current through input pin (DC) Current through current sense status pin (DC) see internal circuit diagrams on page 8 and 9	IIN IIS	+15, -250 +15, -250	mA

Description

N channel vertical power FET BTS650P with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.


Parameters:

Technical/Catalog Information	BTS650P
Vendor	Infineon Technologies
Category	Integrated Circuits (ICs)
Package / Case	TO-220-7 (Bent Leads)
Mounting Type	Through Hole
Type	High Side
Voltage - Supply	5 V ~ 34 V
On-State Resistance	4.4 mOhm
Current - Output / Channel	70A
Current - Peak Output	130A
Packaging	Tube
Input Type	Non-Inverting
Number of Outputs	1
Operating Temperature	-40°C ~ 150°C
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BTS650P BTS650P BTS650PIN ND BTS650PINND BTS650PIN