BTS640S2

Type: High Side
Input Type: Non-Inverting
Number of Outputs: 1
Mounting Type: Surface Mount
Packaging: Tube
Operating Temperature: -40°C ~ 150°C
On-State Resistance: 27 mOhm
Manufacturer: Infineon Technologies
Voltage - Supply: 5 V ~ 34 V
Series: PROFET®
Current - Peak Output: 50A
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device Package: PG-TO220-7
Current - Output / Channel: 12.6A


Features:

• Short circuit protection 
• Current limitation
• Proportional load current sense
• CMOS compatible input
• Open drain diagnostic output 
• Fast demagnetization of inductive loads 
• Undervoltage and overvoltage shutdown with
   auto-restart and hysteresis
• Overload protection
• Thermal shutdown
• Overvoltage protection including load dump (with
   external GND-resistor)
• Reverse battery protection (with external GND-resistor)
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection


Application

• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads 
• Replaces electromechanical relays, fuses and discrete circuits


Specifications

Parameter	Symbol	Values	Unit
Supply voltage (overvoltage protection see page 4)	Vbb	43	V
Supply voltage for full short circuit protection Tj Start=-40 ...+150°C	Vbb	34	V
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5V RI2)= 2 Ω, RL= 1 Ω, td= 200 ms, IN= low or high	VLoaddump3)	60	V
Load current (Short circuit current, see page 5)	IL	self-limited	A
Operating temperature range Storage temperature range	Tj Tstg	-40 ...+150 -55 ...+150	°C
Power dissipation (DC), TC 25 °C	Ptot	85	W
Inductive load switch-off energy dissipation, single pulse Vbb = 12V, T j,start = 150°C, TC = 150°C const.                                                          IL = 12.6 A, ZL = 4,2 mH, 0 Ω:                                                              IL = 4 A, ZL = 330 mH, 0 Ω:	EAS EAS	0,41 3,5	J
Electrostatic discharge capability (ESD)                                      IN: (Human Body Model)                                                             ST, IS:                                                           out to all other pins shorted: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5kΩ; C=100pF	VESD	1.0 4.0 8.0	kV
Input voltage (DC)	VIN	-10 ... +16	V
Current through input pin (DC) Current through status pin (DC) Current through current sense pin (DC) see internal circuit diagrams page 8	IIN IST IIS	±2.0 ±5.0 ±14	mA

Description

N channel vertical power FET BTS640S2 with charge pump, ground referenced CMOS compatible input and diagnostic feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS^® technology. Providing embedded protective functions.

Parameters:

Technical/Catalog Information	BTS640S2
Vendor	Infineon Technologies
Category	Integrated Circuits (ICs)
Package / Case	TO-220-7 (Bent Leads)
Mounting Type	Surface Mount
Type	High Side
Voltage - Supply	5 V ~ 34 V
On-State Resistance	27 mOhm
Current - Output / Channel	12.6A
Current - Peak Output	50A
Packaging	Tape & Reel (TR)
Input Type	Non-Inverting
Number of Outputs	1
Operating Temperature	-40°C ~ 150°C
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BTS640S2 BTS640S2