BTS6163D

Power Switch ICs - POE / LAN Smart High Side High Current PROFET

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SeekIC No. : 00629099 Detail

BTS6163D: Power Switch ICs - POE / LAN Smart High Side High Current PROFET

floor Price/Ceiling Price

US $ 1.25~1.38 / Piece | Get Latest Price
Part Number:
BTS6163D
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1790
  • 1790~2500
  • 2500~5000
  • Unit Price
  • $1.38
  • $1.31
  • $1.25
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

On Resistance (Max) : 0.019 Ohms Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : TO-252-5    

Description

Crosstalk :
Bandwidth :
On Time (Max) :
Off Time (Max) :
Switch Voltage (Max) :
Operating Supply Voltage :
Number of Switches :
Switch Configuration :
Mounting Style : SMD/SMT
Package / Case : TO-252-5
Maximum Operating Temperature : + 150 C
On Resistance (Max) : 0.019 Ohms


Features:

Short circuit protection with latch
Current limitation
Overload protection
Thermal shutdown with restart
Overvoltage protection (including load dump)
Loss of ground protection
Loss of Vbb protection (with external diode for charged inductive loads)
Very low standby current
Fast demagnetization of inductive loads
Electrostatic discharge (ESD) protection
Optimized static electromagnetic compatibility (EMC)



Application

• Power switch with current sense diagnostic feedback for 42V and 24 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays, fuses and discrete circuits



Specifications

Parameter Symbol
Values
Unit
Supply voltage (overvoltage protection see page 4) Vbb
62
V
Supply voltage for full short circuit pretection 1) Vbb
48
V
Load dump protection VLoadDump = UA + Vs, UA = 24 V
RI= 2 , RL= 4.4 , td= 400 ms, IN= low or high
VLoad dump 2)
70
V
Load current (Short-circuit current, see page 5) IL
self-limited
A
Operating temperature range
Storage temperature range
Tj
Tstg
-40...+150
-55...+150
Power dissipation (DC) Ptot
59
W
Inductive load switch-off energy dissipation, 3)
single pulse IL = 20 A, Vbb= 24V       Tj=150 °C:
EAS
0.25
J
Electrostatic discharge capability (ESD)
(Human Body Model)
acc. ESD assn. std. S5.1-1993; R=1.5k; C=100pF
VESD
3.0
kV
Current through input pin (DC)
Current through current sense pin (DC)
see internal circuit diagrams page 9

IIN

IIS

+15,-120
+15,-120
mA
Input voltage slew rate
                                     Vbb 16V :
                                    Vbb > 16V 4):
dVbIN / dt
self-limited
20
V/s



Description

N channel vertical power FET BTS6163D with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.


Parameters:

Technical/Catalog InformationBTS6163D
VendorInfineon Technologies (VA)
CategoryIntegrated Circuits (ICs)
Package / CaseDPak, TO-252 (4 leads + tab)
Mounting TypeSurface Mount
TypeHigh Side
Voltage - Supply5.5 V ~ 62 V
On-State Resistance16 mOhm
Current - Output / Channel21.5A
Current - Peak Output70A
PackagingCut Tape (CT)
Input TypeNon-Inverting
Number of Outputs1
Operating Temperature-40°C ~ 150°C
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BTS6163D
BTS6163D
BTS6163DINCT ND
BTS6163DINCTND
BTS6163DINCT



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